NE33200 SUPER LOW NOISE HJ FET
The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial applications.
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NE33200N, NE33200M, NE33200
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