DESCRIPTION The ES25P40 device is a 3.0 volt (2.7V to 3.6V) The memory supports Sector Erase and Bulk Erase single power flash memory device. ES25P40 con- instructions. sists of Eight sectors, each with 512 Kb memory. Each device requires only a 3.0 volt power supply Data appears on SI input pin when inputting data (2.7V to 3.6V) for both read and write functions. into the memory and on the SO output pin when Internally generated and regulated voltages are pro- outputting data from the memory. The devices are vided for program operations. This device does not designed to be programmed in-system with the require Vpp supply. standard system 3.0 volt Vcc supply. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. BLOCK DIAGRAM SRAM PS XDEC Array - L Array - R Logic RD DATA PATH IO CS# SCK SI GND HOLD# SO VCC W# 2 Rev. 0F Oct 04 , 2007 ES25P40 ADVANCED INFORMATION Excel Semiconductor inc. PIN DESCRIPTIONS Pin Description SCK Serial Clock Input SI S