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5SYA, 5SMX, 12M6500, 5SYA1627-02
specifications without notice. 5SMX 12M6500 IGBT characteristic values 2) Parameter Symbol Conditions min typ max Unit Collector (-emitter) V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C 6500 V breakdown voltage Collector-emitter Tvj = 25 °C 4.2 V VCE sat IC = 25 A, VGE = 15 V saturation voltage Tvj = 125 °C 5.4 V Tvj = 25 °C 10 µA Collector cut-off current ICES VCE = 6500 V, VGE = 0 V Tvj = 125 °C 4000 µA Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -200 200 nA Gate-emitter threshold voltage VGE(TO) IC = 10 mA, VCE = VGE, Tvj = 25 °C 6 8 V Gate charge Qge IC = 25 A, VCE = 3600 V, VGE = -15 ..15 V 400 nC Input capacitance Cies 6.28 VCE = 25 V, VGE = 0 V, f = 1 MHz, Output capacitance Coes 0.38 nF Tvj = 25 °C Reverse transfer capacitance Cres 0.06 Internal gate resistance RGint 5 VCC = 3600 V, IC = 25 A, Tvj = 25 °C 640 Turn-on delay time td(on) ns RG = 100 , VGE = ±15 V, Tvj = 125 °C 570 L = 6800 nH, Tvj = 25 °C 270 Rise time
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5SYA1627-02, 5SYA, 5SMX, 12M6500
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