Features 7.0 3.5 - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz 1 2 3 2.3 0.7 4.6 Pin Configuration 1. Base 2. Emitter 3. Collector 4. Emitter Absolute Maximum Ratings (TA = 25 ) Parameter Symbol Ratings Unit Collector to Base Breakdown Voltage BVCBO 17 V Collector to Emitter Breakdown Voltage BVCEO 12 V Emitter to Base Breakdown Voltage BVEBO 1.5 V Collector Current IC 1 A Total Power Dissipation Ptot 3 W Junction Temperature Tj 150 Storage Temperature Tstg -65 ~ 150 1 THN6701B Thermal Characteristics Symbol Parameter Value Unit Rth j-a Thermal Resistance from Junction to Ambient 40 K/W Electrical Characteristics (TA = 25 ) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB = 15 V, IE = 0 mA - - 1.0 ICEO VCE = 11 V, IB = 0 mA - - 5.0 Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA - - 1.0 DC Current Gain hFE VCE = 6 V, IC = 200 mA 20 - 200 Reverse Transfer Capacitance Cre VCB =