2G2M-T, HY27UG, HY27, 2G2M-FP, HY27SGXX2G2M, 2G2M-VP, HY27UGXX2G2M, 2G2M-F, HY27SG162G2M, 2G2M-V, HY27UG162G2M, 2G2M, HY27SG082G2M, 2G2M-TP, HY27UG082G2M, HY27SG
FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES FAST BLOCK ERASE - Cost effective solutions for mass storage applications - Block erase time: 2ms (Typ.) NAND INTERFACE STATUS REGISTER - x8 or x16 bus width. - Multiplexed Address/ Data ELECTRONIC SIGNATURE - Pinout compatibility for all densities - Manufacturer Code - Device Code SUPPLY VOLTAGE CHIP ENABLE DON'T CARE OPTION - 3.3V device: VCC = 2.7 to 3.6V : HY27UGXX2G2M - Simple interface with microcontroller - 1.8V device: VCC = 1.7 to 1.95V : HY27SGXX2G2M AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support Memory Cell Array
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Relevant Keywords:
2G2M-TP, HY27UG082G2M, HY27SG, 2G2M-T, HY27UG, HY27, 2G2M-FP, HY27SGXX2G2M, 2G2M-VP, HY27UGXX2G2M, 2G2M-F, HY27SG162G2M, 2G2M-V, HY27UG162G2M, 2G2M, HY27SG082G2M
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Other Descriptions
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