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Silicon N Channel MOS Type (??MOSIII)


Low drain?source ON resistance : RDS (ON) = 1.0 ? (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 640 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

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Relevant Keywords: 
K2607, 2SK2607

Other Descriptions

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