Silicon N Channel MOS Type (??MOSV)
Low drain?source ON resistance : RDS (ON) = 1.35 ? (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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K2662, 2SK2662
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