Silicon N Channel MOS Type (?-MOSIII)
Low drain-source ON resistance : RDS (ON) = 3.7 ? (typ.) High forward transfer admittance : |Yfs| = 2.6 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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K2700, 2SK2700
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