TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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K3569, 2SK3569
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