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D13332EJ3V0DS00, D13332EJ3V0DS


DESCRIPTION ORDERING INFORMATION The 2SK3109 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3109 TO-220AB (MP-25) switching characteristics, and designed for high voltage 2SK3109-S TO-262 (MP-25 Fin Cut) applications such as DC/DC converter. 2SK3109-ZJ TO-263 (MP-25ZJ) FEATURES · Gate voltage rating ±30 V · Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) · Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) · Avalanche capability rated · Built-in gate protection diode · Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±10 A Note1 Drain Current (pulse) ID(pulse) ±30 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 50 W Channel Temperature Tch 150 &deg

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D13332EJ3V0DS00, D13332EJ3V0DS
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