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D14134EJ5V0DS00, D14134EJ5V0DS
DESCRIPTION ORDERING INFORMATION The 2SK3357 is N-channel MOS Field Effect Transistors PART NUMBER PACKAGE designed for high current switching applications. 2SK3357 TO-3P FEATURES · Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 38 A) (TO-3P) RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 38 A) · Low Ciss: Ciss = 9800 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±75 A Note1 Drain Current (pulse) ID(pulse) ±300 A Total Power Dissipation (TC = 25°C) PT1 150 W Total Power Dissipation (TA = 25°C) PT2 3.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg 55 to +150 °C Note2 Single Avalanche Current IAS 75 A Note2 Single Avalanche Energy EAS 562 mJ Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25°C, RG = 25 , VGS = 20 V 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 0.83 °C/W Channel t
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