DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 FEATURES 10 · Easy mount by 0.1 inch of terminal interval. · High hFE for Darlington Transistor. MIN. · Surge Absorber (Zener Diode) built in. 2.5 ORDERING INFORMATION 1.4 2.54 1.4 0.6 ±0.1 0.5 ±0.1 Part Number Package Quality Grade µPA1476H 10 Pin SIP Standard 1 2 3 4 5 6 7 8 9 10 Please refer to "Quality grade on NEC Semiconductor Devices" CONNECTION DIAGRAM (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its 3 5 7 9 recommended applications. 2 4 6 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage VCBO 100 ±15 V 1 10 Collector to Emitter Voltage VCEO 100 ±15 V Emitter to Base Voltage VEBO 8 V (C) Collector Current (DC) IC(DC) ±2 A/unit