DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES · Supply voltage : VCC = 2.7 to 3.3 V · Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V · Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz · Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz · Upper limit operating frequency : fu = 2.9 GHz TYP. @ 3 dB bandwidth