DESCRIPTION The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station amplifiers. Dies are manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and triple layer aluminum silicon metallization offer a high degree of reliability. FEATURES · High 1 dB compression output power : PO (1 dB) = 75 W TYP. (VDS = 28 V, IDset = 550 mA, f = 960 MHz) · High linear gain : GL = 17.5 dB TYP. (VDS = 28 V, IDset = 550 mA, f = 960 MHz) · High drain efficiency : d = 54% TYP. (VDS = 28 V, IDset = 550 mA, f = 960 MHz) · Low intermodulation distortion : IM3 = -31 dBc TYP. (VDS = 28 V, IDset = 550 mA, f = 960/960.1 MHz, Pout = 45 dBm (2 tones) ) · Excellent thermal stability · Low cost hollow plastic packages · Integrated ESD protection · Excellent stability against