DESCRIPTION The transistor is housed in a 1/4" capstan envelope with a ceramic cap. N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit. MODE OF OPERATION VCE f PL Gp zi YL V MHz W dB % mS c.w. 12,5 470 4 > 8,0 > 60 2,1 + j2,3 57 - j56 c.w. 12,5 175 4 typ. 15,0 typ. 60 2,0 - j2,2 51 -j48 PIN CONFIGURATION PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter handbook, halfpage 4 3 base 4 emitter 1 3 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product