DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V 'trench' technology. The device ID Drain current (DC)1 75 A features very low on-state resistance Ptot Total power dissipation 178 W and has integral zener diodes giving Tj Junction temperature 175 °C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 14 m intended for use in DC-DC resistance VGS = 10 V converters and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k - 55 V ±VGS Gate-source voltage - - 20 V ID Drain current (DC)1 Tmb = 25 °C - 75 A ID Drain current (DC) Tmb = 100 °C - 56 A ID