description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package. NPN complement: PMEM4030NS. 1.2 Features s 1 W total power dissipation s High current capability up to 2 A s Reduces Printed-Circuit Board (PCB) area required s Reduces pick and place costs s Small plastic Surface Mounted Device (SMD) package s Transistor x Low collector-emitter saturation voltage s Diode x High-speed switching x Low forward voltage x Guard ring protected 1.3 Applications s DC-to-DC converters s Inductive load drivers s General-purpose load drivers 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit PNP transistor VCEO collector-emitter voltage open base - - -50 V IC collector current continuous - - -2 A Schottky barrier rectifier VR reverse voltage - - 40 V IF forward current - - 1 A Philips Semiconductors PMEM4030PS PN