description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Footprint 90 % smaller than SOT23 I Lower on-state resistance I Low threshold voltage I Leadless package I Fast switching 1.3 Applications I Driver circuits I Load switching in portable appliances I DC-to-DC converters 1.4 Quick reference data I VDS 20 V I ID 2.28 A I RDSon 300 m I Ptot 2.50 W 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) 1 D 2 source (S) 3 3 drain (D) 2 G Transparent top view mbb076 S SOT883 (SC-101) NXP Semiconductors PMZ250UN N-channel TrenchMOS extremely low level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMZ250UN SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 × 0.6 × 0.5 mm 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions