Features · High speed switching · Capable of 4.5 V gate drive · Low drive current · High density mounting · Low on-resistance RDS(on) = 6.7 m typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 3 4 5 Drain 12 S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS +16/-12 V Drain current ID 30 A Note1 Drain peak current ID(pulse) 120 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 2 10 A Avalanche energy EAR Note 2 10 mJ Channel dissipation Pch Note3 45 W Channel to Case Thermal Resistance ch-C 2.78 °C/W Channel temperature Tch 150 °C Storage temperature Tstg ­55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at Tch = 25°C, Rg 50 3. Tc = 25°C Rev.9.00 Apr 19, 2006 page 1 of 6 RJK0305DPB Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test