FEATURES 5 20V, 6A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. -20V, -4.3A, RDS(ON) = 90m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V Drain Current-Continuous ID 6 -4.3 A a Drain Current-Pulsed IDM 35 -17 A Maximum Power Dissipation PD 2.0 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b RJA 62.5 C/W 2000.October http://www.cetsemi.com 5-9 CEM2030 N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVD