FEATURES 5 30V, 7A, RDS(ON) = 28m @VGS = 10V. RDS(ON) = 40m @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 High power and current handing capability. 8 7 6 5 Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Drain Current-Continuous ID 7 -5.2 A a Drain Current-Pulsed IDM 20 -20 A Maximum Power Dissipation PD 2.0 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b RJA 62.5 C/W Rev 1. 2005.December http://www.cetsemi.com 1 CEM8958 N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage