FEATURES Type VDSS RDS(ON) ID @VGS CEP80N75 75V 13m 80A 10V CEB80N75 75V 13m 80A 10V CEF80N75 75V 13m 80A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. G D G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 80 80 e A Drain Current-Pulsed a IDM f 320 320 e A Maximum Power Dissipation @ TC = 25 C 200 75 W PD - Derate above 25 C 1.3 0.5 W/ C Single Pulsed Avalanche Energy d EAS 880 880 mJ Single Pulsed Avalanche Current d IAS 45 45 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RJC 0.75 2 C/W Thermal Resistance, Junction-to-Ambient R