FEATURES 20V, 3.0A, RDS(ON) = 55m (typ) @VGS = 4.5V. RDS(ON) = 82m (typ) @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 3 A a Drain Current-Pulsed IDM 10 A Maximum Power Dissipation PD 1.25 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b RJA 100 C/W 2003.August http://www.cetsemi.com 7 - 10 CES2302 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 10µA 20 V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 µA Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA