FEATURES 60V, 5A, RDS(ON) = 55m @VGS = 10V. RDS(ON) = 75m @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5 A a Drain Current-Pulsed IDM 20 A Maximum Power Dissipation PD 3 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b RJA 42 C/W 2004.June http://www.cetsemi.com 7 - 54 CET456N Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V 1 µA Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA Gate Body Leaka