Power MOSFET 50 Amps, 30 Volts, Logic Level
Features P-Channel · Avalanche Energy Specified D · Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode · Diode is Characterized for Use in Bridge Circuits · IDSS and VDS(on) Specified at Elevated Temperature G · Short Heatsink Tab Manufactured - Not Sheared S · Specially Designed Leadframe for Maximum Power Dissipation · Pb-Free Packages are Available 4 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) D2PAK CASE 418B Rating Symbol Value Unit 2 STYLE 2 1 Drain-Source Voltage VDSS 30 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate-Source Voltage MARKING DIAGRAM - Continuous VGS ±15 Vdc & PIN ASSIGNMENT - Non-Repetitive (tp 10 ms) VGSM ± 20 Vpk 4 Drain Current - Continuous ID 50 Adc Drain Drain Current - Continuous @ 100°C ID 31 Drain Current - Single Pulse (tp 10 ms) IDM 150 Apk Total Power Dissipation PD 125 W M TB Derate above 25°C 1.0 W/°C 50P03HG Total Power Dissipation @ TC = 25°C
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MTB50P03HDLT4, MTB50P03HDLG, MTB50P03HDL, MTB50P03H, MTB50P03HDLT4G, 50P03HG
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