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QTR_07001.indd


DescriptionThe 0.5m pHEMT GaAs wafer process uses optical gate stepper lithography and is ideal for switches, ampli ers & LNAs. The entire die, with the exception of bridge metal and bonding areas, is fully passivated to help protect the device from environmental conditions. The HMC484MS8G is a low cost SPDT switch in 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels, through 10 watts (+40 dBm). The device can control signals from DC to 3 GHz. The design provides exceptional intermodulation performance; >+70 dBm third order intercept at +5 volt bias. RF1 and RF2 are re ective shorts when OFF. On-chip circuitry allows single positive supply operation from +3 Vdc to +10 Vdc at very low DC current with control inputs compatible with CMOS and most TTL logic families. Applications include wireless infrastructure, ISM/Cellular portables/handsets, automotive telematics, mobile radio, test equipment.2.0 Summary of QUALIFICATION T EST REPORTPart Type: Ampli ers / S

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Relevant Keywords: 
QTR_07001, MIL-STD-883, HMC484MS8G, EIA/JESD47, Tj125C, 121C/100

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