DescriptionThe GaAs InGaP Heterojunction Bipolar Transistor (HBT) D1 process is an advanced transistor technology speci cally designed for high frequency operation. InGaP/GaAs HBT has several advantages over the traditional AlGaAs/GaAs HBT. Most notably is the ability to provide better current gain versus temperature characteristics. In addition, InGaP/GaAs HBTs has been demonstrated to have more robust reliability than AlGaAs/GaAs devices. The process includes low inductance through substrate vias, precision nichrome resistors and very high value MIM capacitors. The die is passivated and the surface is protected with a thick polymer scratch protection. The HMC365 is a low noise Divide-by-4 Static Frequency Divider that has a small size of 0.686 mm x 1.295 mm. This device operates from DC (with a square wave input) to 13 GHz input frequency with a single +5.0V DC supply. The low additive SSB phase noise of -151 dBc/Hz at 100 kHz offset helps the user maintain good system noise performa Part Type: Frequency Generation & Control DevicesQ