ABB Semiconductors AG reserves the right to change
specifications without notice.V SM=6500V ITAVM=1405A I TRMS=2205A I TSM=22000A V T0=1.20V rT=0.600 mBi-Directional Control Thyristor5STB 13N6500Doc. No. 5SYA1035-03 Sep. 01 Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate.The electrical and thermal data are valid for one thyristor half of the device.BlockingPart Number5STB 13N65005STB 13N62005STB 13N5800Conditions V SM6500 V6200 V5800 Vf = 5 Hz, tp = 10msV RM5600 V5300 V4900 Vf = 50 Hz,tp = 10ms SM 400 mAV SM I RM 400 mAV RM Tj = 125CdV/dtcritSM V RM is equal to VSM up to Tj = 110CMechanical dataFMMounting forcenom.90kNmin.81kNmax.108kN a AccelerationDevice unclamped50100 m/s 2 m/s 2mWeight2.9kg DSSurface creepage distance53mmDaAir strike distance22mm5STB 13N6500ABB Semiconductors AG reserves the right to change specifications without notice.Doc. No. 5SYA1035-03 Sep. 01 page 2 of 6 ABB Semiconductors AG reserves the right to change
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13N6500ABB, 7a6b75, V4900, 3CH-5600, RM5600, 13N65005STB, 6419Fax41, TSM22000A, 13N6500_5SYA1035-03Sep, ITAVM1405A, V6200, 13N65000123456789101112, 5SYA1035-03, TRMS2205A, 13N6500Fig, A/s5STB, V5800, 13N62005STB, 5STB13N6500, SM6500V, 13N6500Doc, 90004ce24e, V5300, 0V2390kA, 50Hz.5STB, SM6500
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