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Zetex - ZTX553 Silicon planar medium power transistor datasheet
FEATURES*100 Volt V CEO*1 Amp continuous current *Ptot=1 WattABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLZTX552ZTX553UNITCollector-Base VoltageVCBO-100-120VCollector-Emitter VoltageV CEO-80-100VEmitter-Base VoltageV EBO-5VPeak Pulse CurrentI CM-2AContinuous Collector CurrentIC-1APower Dissipation:at Tamb=25 Cderate above 25 CP tot 15.7 WmW/ COperating and Storage Temperature RangeT j:Tstg-55 to +200 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C).PARAMETERSYMBOLZTX552ZTX553UNITCONDITIONS.MIN.MAX.MIN.MAX.Collector-BaseBreakdown VoltageV(BR)CBO-100-120V IC=-100 mACollector-EmitterSustaining VoltageVCEO(sus)-80-100VI C=-10mAEmitter-BaseBreakdown VoltageV(BR)EBO-5-5V IE mACollector Cut-OffCurrentICBO-0.1-0.1 mAV CB=-80V V CB=-100VEmitter Cut-Off CurrentIEBO-0.1-0.1mAV EB=-4VCollector-EmitterSaturation VoltageVCE(sat)-0.25-0.25VI C=-150mA, IB=-15mA*Base-Emitter Saturation VoltageVBE(sat)-1.1-1.1VI C=-150mA, IB=-15mA*Base-Emitter Turn-onn VoltageVBE(on)-1.0-1.0VI C=-150mA, V CE=-10V*Static Forward PNP SILICON PLANARMEDIUM POWER TRANSISTORSISSUE 1 VCEO 100V,1A continuous current,Ptot=1 Watt,
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C-50mA, CEO*1, C-150mA, CE-10V*IC-1A, 94FEATURES*100, ZTX553, CB-80V, 3ZTX552ZTX5533-197, ZTX552, CB-10V, 100V,1A, IC-100
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