FEATURES Very Low Eoff for maximum ef ciency Ultra low Cres for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant APT68GA60B 600V POWER MOS 8off is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior ef ciency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. RJCJunction to Case Thermal Resistance--0.24C/WWTPackage WeightTorqueMounting Torque (TO-247 Package), 4-40 or M3 screw10inlbfMicrosemi Website - http://www.microsemi.comO-247CEJ = 25C unless otherwise speci edSymbolParameterTest ConditionsMinTypMaxUnitVBR(CES)Collector-Emitter 052-6326 Rev A 4 - 2008Thermal and Mechanical Char