DescriptionOptionADM1051JR0 C to 70C8-Lead SOICR-8ADM1051AJR0 C to 70C8-Lead SOICR-8PIN FUNCTION DESCRIPTIONSPinNo.MnemonicFunction1FORCE 2Output of Channel 2 control amplifierto gate of external N-chan nel MOSFET.2SENSE 2Input from source of external MOSFETto inverting input of Channel 2 controlamplifier, via output voltage-settingfeedback resistor network.3 Digital Input. Active-low shutdowncontrol with 50 A internal pull-up. Theoutput of Channel 2 control amplifier goesto ground when is taken low.4GNDDevice Ground Pin.5 Digital Input. Active-low shutdown con-trol with 50 A internal pull-up. See t ext formore details of functionality.6SENSE 1Input from source of external MOSFET toinverting input of Channel 1 control ampli-fier, via output voltage-setting feedbackresistor network.7FORCE 1Output of Channel 1 control amplifier togate of external N-channel MOSFET.8V CC12 V Supply.V CC ADM1051/ADM1051A 1FLEAVE OPEN ORCONNECT TOLOGIC SIGNALSIF SHUTDOWNREQUIRED PHD55N03LTFORCE 2 SENSE 2100 features proprietary ESD protection circuitry, permanentdamage may occur on devices subjected to high-energy electrostatic discharges. Therefore,proper ESD precautions are recommended to avoid performance degradation or loss offunctionality. WARNING!ESD SENSITIVE DEVICE ADM1051/ADM1051A "*" Typical Performance Characteristics2 Ch 1 500mV Ch2 500mV M 1.00 s Ch1 3.46 V Ch4 500mV Tek S TOP : Single Seq 50.0MS/ S(+)',( ) ' ) # 85 CV IN V1.5003.0 V OUT V3.13.23.33.43.53.61.5021.5041.5061.5081.5101.5121.514 C(+)#, ) ' V IN V1.81553.0 V OUT V3.13.23.33.43.53.61.81601.81651.81751.81851.81901.82001.82051.81801.8195 C 25 C(+)$, ) # CURRENT A1.50OUTPUT V 01 1.511.521.531.551.54(+)*, ) ' CURRENT A1.795OUTPUT V 01 1.8001.8051.8101.8251.815(+)-, ) # FREQUENCY Hz 70RIPPLE REJECTION dB 60 40 30 10 20 0 501001010k 100k 10M1k1M 10CHANNEL 1CHANNEL 2IL = 10mA(+). ))/ 0 "-" ADM1051/ADM1051A TEMPERATURE C 1.40OUTPUT V085 1.451.501.551.851.701.801.601.651.7525 CHANNEL CHANNEL(+)1 2 ( BW 20.0mV M 1.00 s Ch2 1 SPECIF