Featuresw Low Capacitance (<1.0 pF) w Low V F (390 mV Typical @ 1.0 mA) w Low V F (1.0 mV Typical @ 1.0 mA)w These are Pb-Free Devices Benefitsw Reduced Parasitic Losses w Accurate Signal MeasurementMAXIMUM RATINGSRatingSymbolMaxUnitPeak Reverse Voltage VR15V Forward Current IF30mA Operating and StorageTemperature Range TJ, T stg-65 to +1505CESD Rating:Class 1 per Human Body ModelClass A per Machine ModelMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.RF SCHOTTKYBARRIER DIODES15 VOLTS, 30 mAMARKINGDIAGRAMDevicePackageShipping ORDERING INFORMATIONNSR15ADXV6T1SOT-5634 mm pitch4000 / Tape & Reel SOT-563 CASE 463A5R= Specific Device CodeD= Date Code 64 5123 5RDhttp://onsemi.comNSR15ADXV6T5SOT-5632 mm pitch8000 / specifications,including part orientation and tape sizes, pleaserefer to our T ape and Reel Packaging SpecificationsBrochure, BRD8011/D.NSR15ADXV6T1, NSR15ADXV6T5http://onsemi.com2ELECTRICAL CHARACTERISTICSCharacteristicSymbolMinTyp MaxUnitBreakdown Voltage (IR = 10 A)V BR 1520-V Reverse Leakage (V R = 1.0 V) IR-250nAForward Voltage (IF = 1.0 mA) VF1-390415mVForward Voltage (IF = 10 mA) VF2-530680mV Delta V F VF-115mV Capacitance (V F = 0 V, f = 1.0 MHz) CT-0.81pFFigure 1. Forward Current versus ForwardVoltage at TemperaturesVF, FORWARD VOLTAGE (V)1001010.10.70.60.50.40.30.20.10Figure 2. Reverse Current versus ReverseVoltageVR, REVERSE VOLTAGE (V) 151050 10 k1 k 1001010.01 100 k IF, FORWARD CURRENT (mA)IR , REVERSE CURRENT (nA)Figure 3. Total Capacitance versus ReverseVoltageVR, REVERSE VOLTAGE (V)10.90.70.686543210Figure 4. Dynamic Resistance versus Forward CurrentIF, FORWARD CURRENT (mA)1001010.11001010.51000CT, CAPACITANCE (pF) RD, DYNAMIC RESISTANCE ( )70.85C5C5C5C5C5C5CNSR15ADXV6T W Semiconductor Components Industries,