CGH40120, 120W, GaN HEMT by Cree for General Purpose (Wireless Devices), 100W CGH40120F, 500MHz, 1000MHz, 1300MHz, 1800MHz, 2500MHz, 3500MHz, 4000MHz, 1.0GHz, 2.0GHz, 1.3GHz, 1.8GHz, 3.5GHz, 4.0GHz
FEATURESUp to 4 GHz Operation20 dB Small Signal Gain at 1.0 GHz15 dB Small Signal Gain at 2.0 GHz120 W Typical PSATSAT28 V OperationAPPLICATIONS2-Way Private RadioCellular InfrastructureTest Instrumentationfor OFDM, W-CDMA, EDGE, CDMA waveformsPRELIMINARYSubject to change without notice.www.cree.com/wireless2CGH40120F Rev 1.1 PreliminaryCree, Inc.4600 Silicon Drivewww.cree.com/wirelessParameterSymbolRatingUnitsDrain-Source VoltageVDSS84VoltsGate-to-Source VoltageVGSVoltsStorage TemperatureTSTGOperating Junction TemperatureTJ225Maximum Forward Gate CurrentIGMAXmASoldering Temperature1TS245Screw Torque80in-ozThermal Resistance, Junction to Case2RJC1.5Case Operating TemperatureTC1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp2 Measured for the CGH40120F at PDISS = 112 W. See also, the Power Dissipation De-rating Curve on Page 7.Electrical Characteristics (TCCharacteristicsSymbolMin.Max.UnitsConditionsDC Characteristics1Gate Threshold VoltageVGS( 1CGH40120F120 W, RF Power GaN HEMTCrees CGH40120F
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C152C11CAP, Inc.4600, S21Ang, CGH40120F, PSATSAT28, TANTALUM1C161C1712C20, C12222C10, GS9CGH40120F, S12Mag, CGH40120, PDC3CGH40120F, S22Ang, A5CGH40120F, GHz15, S12Ang, C222C214C7, MHz12, S22500, A56070-VDD, GHz120, S11Mag, W-CDMA, C212R11R21L11J1, J2CONN, S21Mag, 1CGH40120F120, CGH40120F-TB.4, S11Ang, VVBR84100-VDCVGS
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