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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS CMOS NAND EEPROM


The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EPROM) organized as (2048 + 64) bytes - 64 pages - 1024 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes - 64 pages).

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Relevant Keywords: 
TC58NVG0S3AFT05, TC58NVG0S3A
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Related Datasheets: 
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS / 8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY

Other Descriptions

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