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TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS


The TH58NVG2SxB is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and ProgrammableRead-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words - 64 pages - 4096 blocks. The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes - 64 pages). The TH58NVG2SxB is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

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Relevant Keywords: 
TH58NVG2SxB, TH58NVG2S8BFT00, TH58NVG2S8B, TH58NVG2S3BFT00, TH58NVG2S3B
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Related Datasheets: 
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS/8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M - 8 BITS / 8M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M - 8 BITS/2M - 16 BITS) CMOS FLASH MEMORY

Other Descriptions

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