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Zetex - FZT796A Silicon planar medium power high gain transistor datasheet
FEATURES*200 Volt V CEO*Gain of 250 at I C=0.3 Amps*Very low saturation voltageAPPLICATIONS*Battery powered circuitsCOMPLEMENTARY TYPE -FZT696BPARTMARKING DETAIL -FZT796AABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITCollector-Base VoltageV CBO-200VCollector-Emitter VoltageV CEO-200VEmitter-Base VoltageVEBO-5VPeak Pulse CurrentI CM-1AContinuous Collector CurrentIC-0.5APower Dissipation at Tamb=25 CPtot 2WOperating and Storage Temperature RangeTj :Tstg-55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C)PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS.Breakdown VoltageCollector-Base Collector-EmitterV(BR)CBO-200V IC mAV(BR)CEO-200VI C=-10mA*Emitter-Base V(BR)EBO-5VIE=-100 mACollector Cut-Off CurrentI CBO-0.1mAV CB=-150VEmitter Cut-Off CurrentIEBO-0.1mAV EB=-4VCollector-Emitter Saturation VoltageVCE(sat)-0.2-0.3-0.3 VVVIC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA*Base-EmitterSaturationVoltageVBE(sat)-0.95VI C=-200mA,I B=-20mA*Base-EmitterTurn-OnVoltageVBE(on)-0.67VI C=-200mA, SOT223 PNP SILICON PLANAR MEDIUMPOWER HIGH GAIN TR Battery powered circuits,VCEO 200,Gain of 250 at IC=0.3 Amps,Very low saturation voltages,
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Relevant Keywords:
C-10mA, CE-10V*IC-300mA, IB-2mA, C-55, FE300300250100800I, SOT223, B2-10mA, CE-10V*IC-100mA, FZT796ACCEB3, C-50mA, DC100ms10ms100, IC-200mA, B10TYPICAL, CB-10V, FZT796AABSOLUTE, C-200mA,V, CE10V, IC-100mA, B1-10mAI, C175, FZT796A, VVVIC-50mA, C-200mA,I, CE-10V*IC-400mA, IB-5mA, 1995FEATURES*200, C100, FZT696BPARTMARKING, V(BR)EBO-5VIE-100
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