NPN SILICON PLANARHIGH SPEED SWITCHING TRANSISTORS
FEATURES*15 Volt V CEO *fT=600 MHzAPPLICATIONS*VHF/UHF operationABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO30VCollector-Emitter VoltageV CEO15VEmitter-Base VoltageV EBO 3VBase CurrentIB 100mAContinuous Collector CurrentIC500mAPower Dissipation at Tamb=25 CPtot300mWOperating and Storage Temperature RangeTj :Tstg-55 to +175 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C).PARAMETERSYMBOLMIN.MAX.UNITCONDITIONS.Collector-Base Breakdown VoltageV(BR)CBO30VIC=10 mA, IE =0Collector-Emitter Sustaining VoltageVCEO(SUS)15VIC=10mA, IB =0Emitter-Base Breakdown VoltageV(BR)EBO 3VIE=10 mA, IC =0Collector Cut-Off CurrentICBO0.01mAV CB=15V, IE =0Emitter Cut-Off CurrentI EBO0.2mAV EB=2V, IC =0Collector-EmitterSaturation VoltageZTX320, ZTX322ZTX323 ZTX321VCE(sat)0.40.40.4 VVVIC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mABase-EmitterSaturation VoltageZTX320, ZTX322ZTX323ZTX321 VBE(sat)1.01.01.0 VVVIC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mAStatic ForwardCurrent TransferR NPN SILICON PLANARHIGH SPEED SWITCHING TRANSISTORS 625mW power dissipation,Extremely low saturation voltage e.g., 10mV Typ.,Excellent hFE characteristics up to 10A (pulsed),Extremely low equivalent on-resistance,IC = 2.5A continuous collector current,IC Up to 10A peak pulse current,
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CB10V, IC10mA, ZTX3233-160, CE1VIC3mA, ZTX321ZTX322, 94FEATURES*15, IB1mA, ZTX323, CE10VIC30mA, VVVIC10mA, 3VIE10, Hz0510152025, ZTX322ZTX323ZTX321, CB15V, IC4mA, 15dBIC6mA, EB2V, ZTX322ZTX323, CB12V, IC3mA, 10Vf100MHz, CE6VRS400, ZTX321ZTX322ZTX323h
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