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Zetex - MPS2369A Planar high speed switching transistor datasheet
FEATURES*40 Volt VCEO*Very fast switchingABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO40VCollector-Emitter VoltageV CES40VCollector-Emitter VoltageV CEO15VEmitter-Base VoltageV EBO4.5VContinuous Collector CurrentIC500mAPower Dissipation at Tamb=25 CP tot300mWOperating and Storage Temperature RangeTj :Tstg-55 to +175 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOLMIN.MAX.UNITCONDITIONS.Collector-BaseBreakdown VoltageV(BR)CBO40V IC=10 mA, IE =0Collector-EmitterBreakdown VoltageV(BR)CEO15VI C=10mA, IB=0* V(BR)CES40VIC=10 mA, V BE =0Emitter-Base Breakdown VoltageV(BR)EBO4.5V IE=10 mA, IC =0Collector Cut-Off CurrentI CBO 2530 nAmAV CB=20V, IE =0 V CB=20V, IE=0, Tamb=150 CCollector-EmitterSaturation VoltageVCE(sat)0.2VI C=10mA, IB=1mA*Base-Emitter Saturation VoltageVBE(sat)0.70.85VI C=10mA, IB=1mA*Static Forward CurrentTransfer Ratioh FE 402020120I C=10mA, V CE=1V*IC=10mA, V CE=1V, Tamb=-55 C*IC=100mA, V CE=1V*Output Capacita NPN SILICON PLANAR HIGH SPEEDSWITCHING TRANSISTORI
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C*IC100mA, IC10, CC3V, MPS2369A270, B210mA(See, EMPS2369A3-68, CB5V, MPS2369A, B13mAI, CIRCUIT980W500, CB20V, IE10, B13mA, CE1V*IC10mA, W10VC, C10mA, IC10mA, 94FEATURES*40, CE1V, V(BR)CES40VIC10
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