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Zetex - ZCN0545A N-channel enhancement mode vertical IGBT datasheet
FEATURES*Extremely low on state voltage*No need to derate for higher temperatures*Excellent temperature immunity*High input impedance*Reverse blocking characteristic which is Independent of gate bias*Low input capacitance*Characterised for logic level driveAPPLICATIONS*Fluorescent lamp driver*Automotive load drivers*High voltage DC-DC converters*Darlington replacement*Telecoms hook switch and earth recall switchABSOLUTE MAXIMUM RATINGS (at Tamb=25 C unless otherwise stated)PARAMETERSYMBOLVALUEUNITForward Drain-Source VoltageV DS450VReverse Drain Source VoltageV SD30VContinuous Drain CurrentID0.32APractical Continuous Drain Current*I DP0.37APulsed Drain Current@ Tamb=25 C@ Tamb=125 CIDMR I DM 21AAGate-Source VoltageV GS 20 VPower Dissipation at Tamb=25 CPtot0.6WPractical Power Dissipation*P DP0.8WOperating and Storage Temperature RangeTj :Tstg-55 to +125 C* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.E-LineTO92 Compatible 3-112D G S ZCN0545 specifications ZCN0545A0255075100125 00.20.40.60.8100us1ms10ms100ms1s10s100s 0 4080120160Pulse Width200t1tp D= t1tpD=1(DC)D=0.5D=0.2D=0.1SINGLEPULSEDerating CurveTransient Thermal ResistanceTemperature3-113100us1ms10ms100ms1s10s100s 0 4080120160Pulse Width200t1tp D= t1tpD=1(DC)D=0.5D=0.2D=0.1SINGLEPULSEDerating CurveTransient Thermal ResistanceTemperature3-11300.20.40.60.81.01.21.41.61.82.00246810 00.40.81.21.62.0V DS- Drain Source Voltage (V)00.40.81.21.62.000.10.20.30.40.5ID- Drain Current (A)NOTE : 80msPulsed test0 20 4060 80 110100CCCiss ossrssNOTE:V=0V GS11010010000.01 0.1110DC100us1ms0.1s 1s V DS- Drain Source Voltage (V)ID- Drain Current (A)0.010.111000.51.51.02.02.53.03.5050100125 TJ- Juntion Temperature ( C) 4V5V6V7V8V9V3VV=10V GSV DS- Drain Source Voltage (V)TYPICAL CHARACTERISTICSNOTE : 80 ms Pulsed testV DS=0V V DS=0V mSaturation CharacteristicsTransconductance v Drain CurrentPulsed Current v Temperature Safe Operating Area(Tamb=25 C, single pulse)Fall Time v Drain CurrentC N-CHANNEL ENHANCEMENTMODE VERTICAL IGBTISSUE 2
Other Descriptions
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