FEATURES-30V, -4.9A, RDS(ON) = 53mW @VGS = -10V. RDS(ON) = 95mW @VGS = -4.5V.Super hig dense cell design for extremely low RDS(ON).High power and current handing capability.Surface mount Package.ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameterymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation VDSVGSIDPDIDM-302.0-30-4.9 20VWAAV5 - 131SO-81D1 D1 D2 D2S1 G1 S2 G287651234Lead free product is acquired.1999.Aprilhttp://www.cetsemi.com5Operating and Store Temperature RangeTJ,Ttg-55 to 150 CThermal CharacteristicsThermal Resistance, Junction-to-Ambient bParameterSymbolLimitUnitsC/W62.5RqJACEM4953Electrical Characteristics TA = 25 C unless otherwise notedParameterSymbolMinUnitsOff CharacteristicsDrain-Source Breakdown VoltageZero Gate Voltage Drain CurrentGate Body Leakage Current, ForwardForwand TransconductanceGate Threshold VoltageStatic Drain-SourceOn-ResistanceBVDSSIDSSIGSSRIGSSF5346-1-3-100 100-1m Datasheet3. TJM-TA = P* RJA (t)4. Duty Cycle, D=t1/t2100Single Pulse10-110-20.020.050.10.2D=0.5CEM4953Electrical Characteristics TA = 25 C unless otherwise notedParameterSymbolMinUnitsOff CharacteristicsDrain-Source Breakdown VoltageZero Gate Voltage Drain CurrentGate Body Leakage Current, ForwardForward TransconductanceGate Threshold VoltageStatic Drain-SourceOn-ResistanceBVDSSIDSSIGSSRIGSSF5346-1-3-100 100-1mW VnAnA AVS5 - 132Gate Body Leakage Current, ReverseOn Characteristics cDynamic Characteristics dInput CapacitanceReverse Transfer CapacitanceOutput CapacitanceSwitching Characteristics dTurn-On Delay TimeTurn-Off Fall TimeTurn-Off Delay TimeTurn-On Rise TimeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeDrain-Source Diode Characteristics and Maximun RatingsDrain-Source Diode Forward Current bDrain-Source Diode Forward Voltage cTest ConditionVGS = 0V, ID = -250 AVGS(th)RDS(on)gFSCissCossCrsstd(on)trtd(off)tfQgQgsQgdISVSDTypMax-30VDS = -30V, VGS = 0VVGS = 20V, VDS = 0VVGS = - Dual P-Channel Enhancement Mode Field Effect T