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HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916


DESCRIPTIONSYMBOLVALUEUNITReverses Voltage ( Continuous)VR75VRepetitive Peak Reverse VoltageV100VAverage Forward Current TA =25 CIF (AV)75mA TA =150 CIF (AV)10mAForward Current (D.C.)IFRepetitive Peak Forward CurrentIFRM225mANon Repetitive Peak Surge Currenttp=1secIFSM500mAPower DissipationPtot250mWStorage TemperatureTstg-65 to +200 COperating ambient TemperatureTamb-65 to +175 CELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise)DESCRIPTIONSYMBOLTEST CONDITIONMINTYPMAXUNITForward VoltageVFIN914/916IF=101.0V1N914BIF=100mA, 1.0VIF=5mA, 0.620.72VReverse Breakdown VoltageV(BR)IR=100 A100VReverse CurrentIRVR= 20V25n VR= 75V5 AVR= 20V, Tj=150 CDiode CapacitanceCdVR2.5pFReverse Recovery TimetrrIF=10mA to IR=10mA8nsRL=100 Measured at IR=1mAIF=10mA to IR=60mA4nsRL=100 Measured at IRContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyContinental Device India Limited Data Sheet Page 1N914_B_6 Rev031001 DO-35 Glass Axial PackageDO-35, 52mm Taping Sp FEATURESIntended for General Purpose Application.ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise)DESCRIPTIONSYMBOLVALUEUNITReverses Voltage ( Continuous)VR75VRepetitive Peak Reverse VoltageV100VAverage Forward Current TA =25 CIF (AV)75mA TA =150 CIF (AV)10mAForward Current (D.C.)IFRepetitive Peak Forward CurrentIFRM225mANon Repetitive Peak Surge Currenttp=1secIFSM500mAPower DissipationPtot250mWStorage TemperatureTstg-65 to +200 COperating ambient TemperatureTamb-65 to +175 CELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise)DESCRIPTIONSYMBOLTEST CONDITIONMINTYPMAXUNITForward VoltageVFIN914/916IF=101.0V1N914BIF=100mA, 1.0VIF=5mA, 0.620.72VReverse Breakdown VoltageV(BR)IR=100 A100VReverse CurrentIRVR= 20V25n VR= 75V5 AVR= 20V, Tj=150 CDiode CapacitanceCdVR2.5pFReverse Recovery TimetrrIF=10mA to IR=10mA8nsRL=100 Measured at IR=1mAIF=10mA to IR=60mA4nsRL=100 Measured at IRContinental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyConti SpecificationNOTE: Cathode is marked by Band.C

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Relevant Keywords: 
31N914_B_6, Rev031001, IN914, 20V25n, IR60mA4nsRL100, DO-35, Tj150, 20125K25, IR1mAIF10mA, 75V5, TA5K, 1N914_B_6, IR10mA8nsRL100, 5K12, Ta25, 1n914_6, IN916
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HIGH SPEED SILICON SWITCHING DIODE AXIAL LEADCD1N4

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