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October 2006Rev. 31/1414STESB01ESBT Base DriverFea


DescriptionThe STESB01 is a dedicated base current biasing transistor for the Emitter-Switched Bipolar Transistor (ESBT) family of power switches. The device is able to control the ESBT storage time (from 150ns to 1.5s) using closed loop architecture. This guarantees proper operation of the ESBT in every line and load condition, avoiding oversaturation of the device and, at the when a higher load is required. The storage time can be adjusted with an external resistor, which allows maximum flexibility in different applications.The optimization of the base current value also reduces the base current losses to minimum level.SOT23-6L SO-8www.st.comOrder code Part numberPackagePackagingSTESB01STRSOT23-6L3000 Parts per ReelSTESB01DRSO-82500 Parts per ReelContentsSTESB012/14 Contents1Schematic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Feature summaryControls ESBT base current in every line/load condition Supply voltage range: 8V to 20 VStorage time controlled by closed loop architecture (from 150ns to 1.5s)Under voltage lockout with hysteresisDescriptionThe STESB01 is a dedicated base current biasing transistor for the Emitter-Switched Bipolar Transistor (ESBT) family of power switches. The device is able to control the ESBT storage time (from 150ns to 1.5s) using closed loop architecture. This guarantees proper operation of the ESBT in every line and load condition, avoiding oversaturation of the device and, at the when a higher load is required. The storage time can be adjusted with an external resistor, which allows maximum flexibility in different applications.The optimization of the base current value also reduces the base current losses to minimum level.SOT23-6L SO-8www.st.comOrder code Part numberPackagePackagingSTESB01STRSOT23-6L3000 Parts per ReelSTESB01DRSO-82500 Parts per ReelContentsSTESB012/14 Contents1 specifications are available at: www.st.com.ST

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JESD97, SOT23-xL, IC.53, SO-8Pin, GND.3N.C.Not, SO-8.STESB0114/14, DATA0016023/C, SO-8, 10mA50mV, STESB01

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DATA0016023/C Operating Parameter DATA0016023/C Fichatécnicade DATA0016023/C Feature DATA0016023/C Xref
DATA0016023/C RoHS DATA0016023/C 相等於 DATA0016023/C équivalent DATA0016023/C 數據
DATA0016023/C Fiche technique DATA0016023/C Mechanical Outline DATA0016023/C PDF DATA0016023/C Design Idea
DATA0016023/C Scheda DATA0016023/C Datenblatt DATA0016023/C 회로도 DATA0016023/C 데이터시트
DATA0016023/C Ersatz DATA0016023/C Distribution DATA0016023/C Samples DATA0016023/C Release Notes
DATA0016023/C Catalog DATA0016023/C 相等于 DATA0016023/C Schematische DATA0016023/C Application Note
DATA0016023/C equivalente DATA0016023/C Ficha técnica DATA0016023/C Schematic DATA0016023/C Esquema
DATA0016023/C Options DATA0016023/C Availability SO-8 Equivalent SO-8 Fichatécnicade
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SO-8.STESB0114/ Explanation SO-8.STESB0114/ Revision SO-8.STESB0114/ Specs SO-8.STESB0114/ Features
SO-8.STESB0114/ 回路図 SO-8.STESB0114/ End-of-Life SO-8.STESB0114/ Description SO-8.STESB0114/ Prototype
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SO-8.STESB0114/ Pin-out SO-8.STESB0114/ Reference Design IC.53 Schematic IC.53 Fichetechnique
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