Description UC1608xGBE Gold bumped die. UC1608xFBE COF packaging. UC1608xFCE COF packaging. General Notes APPLICATION INFORMATIONFor improved readability, the specification contains many application data points. When application information is given, it is advisory and does not form part of the specification for the device. BARE DIE DISCLAIMERAll die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing. There is no post waffle saw/pack testing performed on individual die. Although the latest modern processes are utilized for wafer sawing and die pick-&-place into waffle pack carriers, UltraChip has no control of third party procedures in the handling, packing or assembly of the die. Accordingly, it is the responsibility of the customer to test and quality their application in which the dieis to be used. UltraChip assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of the die FEATURE HIGHLIGHTS Single chip controller-driver supports 128 Support both row ordered and column ordered display buffer RAM access. Support industry standard 4-wire, 3/4-wire, and 3-wire serial buses (S8, S8uc, and S9) and 8-bit/4-bit parallel buses (8080 or 6800). Support two multiplexing rates (128, 96). on-chip pumping capacitor requires only 3 external capacitors to operate. Flexible data addressing/mapping schemes to support wide ranges of software models and LCD layout placements. Software programmable 4 temperature compensation coefficients. RESET commands, make RST pin optional. Many on-chip and I/O pad layout features to support optimized COG applications. V DD (digital) range (Typ.): 2.8 V ~ 3.3V V DD (analog) range (Typ.): 2.8 V ~ 3.3V LCD VOP range: 11.09V ~ 16V Available in gold bump dies Bump pitch: 45M min. Bump gap: 18M min. Bump surface: > 3000M2UTRAIPHigh-Voltage Mixed-Signal IC 1999~2008 4 MP Specifications O RDERING INFORMATIONProduct ID Description UC1608xGBE Gold Specifications O RDERING INFORMATIONPro