Zetex - ZVP0540A P-channel enhancement mode vertical DMOS FET datasheet
FEATURES*400 Volt V DS *RDS(on) =150 WABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITDrain-Source VoltageV DS-400VContinuous Drain Current at Tamb=25 CID-45mAPulsed Drain CurrentI DM-400mAGate Source Voltage V GS 20VPower Dissipation at Tamb=25 CPtot700mWOperating and Storage Temperature RangeTj :Tstg-55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOLMIN.MAX.UNITCONDITIONS.Drain-Source Breakdown Voltage BVDSS-400VID=-1mA, V GS =0VGate-Source Threshold VoltageVGS(th)-1.5-4.5VID=-1mA, V DS= V GSGate-Body LeakageI GSS20nAV GS = 20V, V DS =0VZero Gate Voltage Drain CurrentIDSS-20-2 mA mA V DS=-400 V, V GS =0V DS=-320 V, V GS=0V,T=125 C (2)On-State Drain Current(1)ID(on)-100mAV DS=-25 V, VGS=-10VStatic Drain-Source On-StateResistance (1)RDS(on)150 WV GS=-10V,I D=-50mAForward Transconductance(1)( 2)g fs40mSV DS=-25V,I D=-50mAInput Capacitance (2)Ciss120pFCommon Source OutputCapacitance (2)C oss20pFV DS=-25 V, VGS=0V, f=1MHzReverse TransferCapaci P-CHANNEL ENHANCEMENTMODE VERTICAL DMOS FETISSUE 2
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Relevant Keywords:
DS-320, GSS20nAV, DS-25V,I, GS0V,T125, DS-25, ZVP0540A, GS-10V,I, BVDSS-400VID-1mA, VGS0V, DS-400, 94FEATURES*400, P-CHANNEL
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