Zetex - ZTX557 Silicon planar medium power high voltage transistor datasheet
FEATURES*300 Volt V CEO*0.5 Amp continuous current *Ptot= 1 WattABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLZTX556ZTX557UNITCollector-Base VoltageV CBO-200-300VCollector-Emitter VoltageV CEO-200-300VEmitter-Base VoltageV EBO-5VPeak Pulse CurrentI CM-1AContinuous Collector CurrentIC-0.5APower DissipationPtot1.0WOperating and Storage TemperatureRangeTj :Tstg-55 to +200 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOLZTX556ZTX557UNITCONDITIONS.MIN.MAXMIN.MAXCollector-BaseBreakdown VoltageV(BR)CBO-200-300V IC=-100 mACollector-EmitterBreakdown VoltageV(BR)CEO-200-300VI C=-10mA*Emitter-BaseBreakdown VoltageV(BR)EBO-5-5V IE=-100 mACollector Cut-OffCurrentI CBO-0.1-0.1 mAmAV CB=-160V V CB=-200VEmitter Cut-OffCurrentIEBO-0.1-0.1 mAV EB=-4VCollector-EmitterSaturation VoltageVCE(sat)-0.3-0.3VI C=-50mA, IB=-5mA*Base-Emitter Saturation VoltageVBE(sat)-1-1VI C=-50mA, IB=-5mA*Base-Emitter Turn-on VoltageVBE(on)-1-1VIC=-50mA, V CE=-10V*Static ForwardCurrent TransferRati PNP SILICON PLANAR MEDIUM POWERHIGH VOLTAGE TRANSI VCEO 300V,0.5A continuous current,Ptot=1 Watt,
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CE-10V, IE-100, CB-160V, IC-10mA, C-50mA, ZTX557, IC-100, 94FEATURES*300, ZTX556ZTX5573-201, CE-10V*IC-50mA, 0ZTX556, ZTX556
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