Zetex - ZVP4525G P-channel enhancement mode MOSFET datasheet
DESCRIPTIONThis250VenhancementmodeP-channelMOSFETprovidesuserswithacompetitivespecificationofferingefficientpowerhandlingcapability,highimpedanceandisfreefromthermalrunawayandthermallyinducedsecondarybreakdown.Applicationsbenefitingfromthisdeviceincludeavariety of telecom and general high voltage circuits.SOT89 and SOT23-6 versions are also available.FEATURESHigh voltageLow on-resistanceFast switching speedLow gate driveLow thresholdComplementary N-channel type ZVN4525GSOT223 packageEarth recall and dialling switchesElectronic hook switchesHigh voltage power MOSFET driversTelecom call routersSolid state relaysORDERING INFORMATIONDEVICEREELSIZETAPEWIDTHQUANTITYPERREELZVP4525GTA78mmembossed1000unitsZVP4525GTC138mmembossed4000units DEVICE MARKINGZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETDDSGTOP VIEWOT223ZVP4525GSEMICONDUCTORS ISSUE 4 - JUNE 20042THERMAL RESISTANCEPARAMETERSYMBOLVALUEUNITJunctiontoambient (a) R JA63C/WJunctiontoambient (b) R JA26C/WNOTES:(a) For a device surface mounte FEATURESHigh voltageLow on-resistanceFast switching speedLow gate driveLow thresholdComplementary N-channel type ZVN4525GSOT223 packageEarth recall and dialling switchesElectronic hook switchesHigh voltage power MOSFET driversTelecom call routersSolid state relaysORDERING INFORMATIONDEVICEREELSIZETAPEWIDTHQUANTITYPERREELZVP4525GTA78mmembossed1000unitsZVP4525GTC138mmembossed4000units DEVICE MARKINGZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETDDSGTOP VIEWOT223ZVP4525GSEMICONDUCTORS ISSUE 4 - JUNE 20042THERMAL RESISTANCEPARAMETERSYMBOLVALUEUNITJunctiontoambient (a) R JA63C/WJunctiontoambient (b) R JA26C/WNOTES:(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions(b) For a device surface mounted on FR4 PCB measured at t5 secs.(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.ABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLLIMITUNITDrain-sourcevoltage V DSS specificationofferingefficientpowerhandlingcap
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D-1mA,V, NOTES(1), DSS-30-500nAV, ZVN4525GSOT223, CIRCUITSZVP4525GSEMICONDUCTORS, MARKINGZVP4525G250V, DS-25V,V, SOT23-6, 200mA,di/dt100A, JA26C/WNOTES(a), DS-250V,V, RDS(ON)14V, 20046ZVP4525GSEMICONDUCTORS, GSS1100nA, ZVP4525GSEMICONDUCTORS, DD-30V,I, P-CHANNEL, 20041SUMMARYV(BR)DSS-250V, GS-10V,I, ZVP4525G
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