Description 01 20070613 Initial revision NXP Semiconductors AN_BLF578 BLF578LDMOS transistor model Table of contents 1. Introduction.4 2. Model Description..4 3. Model Parameters5 4. Parameter extraction procedure6 5. Model limitations.6 6. Installation Instructions..7 6.1 Case 1: No SiMKit installed..7 6.2 Case 2: Old version of the SiMKit installed7 6.3 Case 3: Updated version of the SiMKit installed.7 7. Legal Information9 7.1 Definitions..9 7.2 Disclaimers9 7.3 Patents9 7.4 Trademarks..9 NXP Semiconductors AN_BLF578 BLF578LDMOS transistor model NXP B.V. 2008. All rights reserved.Application note Rev. 01 25-09-2008 4 of 101. Introduction The purpose of this document is to provide the customer with a comprehensive description of the BLF578 LDMOS transistor model, extraction procedure, installation procedure, limitations and application. The BLF578 is a 1000 W pulsed RF power transistor (see Fig 1). The device has been optimized for applications in the 225 MHz frequency band. For more specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customers own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modifi AN_BLF578 BLF578 LDMOS Transistor Model Rev. 0