P-Channel Enhancement Mode Field Effect Transistor
FEATURES-60V, -3.5A, RDS(ON) = 130mW @VGS = -10V. RDS(ON) = 170mW @VGS =-4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.SOT-223 package.ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation VDSVGSIDPDDM-603-14-3.5 20VWAAV1SGDSOT-223GDDSLead free product is acquired.http://www.cetsemi.com Details are subject to change without notice .Rev 2. 2007.MayOperating and Store Temperature RangeTJ,Tstg-55 to 150 CThermal CharacteristicsThermal Resistance, Junction-to-Ambient bParameterSymbolLimitUnitsC/W42RqJAOperating and Store Temperature RangeSingle Pulsed Avalanche Energy dAvalanche Current aRepetitive Avalanche Energy aEASTJ,TstgEARIAR-65 to +1754.410120AmJ CmJThermal CharacteristicsThermal Resistance, Junction-to-CaseThermal Resistance, Junction-to-AmbientParameterSymbolLimitUnitsW/ CW/ C62.52.5RqJCRqJACET6861Electrical Charact Datasheet3. TJM-TA = P* RJA (t)4. Duty Cycle, D=t1/t2100Single Pulse10-110-210110210010-110-210-30.020.050.10.2D=0.510-30.011086420036912VDS=-30VID=-3.5A P-Channel Enhancement Mode Field Effect Transistor igbt, power semiconductor,power electronics,bridge rectifier,diode,thyristor,cib,rectifier,ipm,driver,inverter,converter,thristor module,gleichrichter,leistungselektronik
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CTJ150, TJM-TA, CET68613C, T6861, C100ms10msDC1s10-4PDMt1t21, SOT-223, C-55, RJA2, A-50-250255075100125150-IS
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