Zetex - FZT788B Silicon planar medium power high gain transistor datasheet
FEATURES*Low equivalent on-resistance; RCE(sat) 93mW at 3A*Gain of 300 at I C=2 Amps and Very low saturation voltageAPPLICATIONS*Battery powered circuitsCOMPLEMENTAY TYPE - FZT688BPARTMARKING DETAIL - FZT788BABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO-15VCollector-Emitter VoltageVCEO-15VEmitter-Base VoltageV EBO-5VPeak Pulse CurrentI CM-8AContinuous Collector CurrentIC-3APower Dissipation at Tamb=25 CP tot 2WOperating and Storage Temperature RangeTj :Tstg-55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C)PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS.Collector-Base Breakdown VoltageV(BR)CBO-15VC=-100 mACollector-Emitter Breakdown VoltageV(BR)CEO-15VIC=-10mA*Emitter-Base Breakdown VoltageV(BR)EBO-5VIE=-100 mACollector Cut-Off CurrentICBO-0.1mAV CB=-10VEmitter Cut-Off CurrentI EBO-0.1mAV EB=-4VCollector-Emitter SaturationVoltageVCE(sat)-0.15-0.25-0.45-0.5 VVVIC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=-50mA*Base-Emitter Saturation Vo BSOT223 PNP SILICON PLANAR MEDIUMPOWER HIGH GAIN T Battery powered circuits,Low equivalent on-resistance,Gain of 300 at IC=2 amps ,Very low saturation voltages,
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C-10mA, CE-2V*IC-6A, IB-5mA, C100, FZT788B, IC-500mA, BSOT223, CE-2V*IC-2A, IB-10mA, C-55, FZT688BPARTMARKING, IC-3A, B200, CE-2V*IC-1A, FZT788BCCE, C-50mA, DC100ms10ms100ms1ms, IC-2A, B2-50mA, CB-10V, FZT788BABSOLUTE, C-1A, CE2V, IC-1A, B1-50mAI, C175, FZT788B3
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