Zetex - ZXM62N02E6 20V N-channel enhancement mode MOSFET datasheet
DESCRIPTIONThis new generation of high density MOSFETs from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURESLow on-resistanceFast switching speedLow thresholdLow gate driveSOT23-6 packageAPPLICATIONSDC - DC ConvertersPower Management FunctionsDisconnect switchesMotor controlORDERING INFORMATIONDEVICEREEL SIZE (inches)TAPE WIDTH (mm)QUANTITYPER REELZXM62N02E6TA78mm embossed3000 unitsZXM62N02E6TC138mm embossed10000 unitsDEVICE MARKING 2N0220V N-CHANNEL ENHANCEMENT MODE MOSFETSOT23-6ZXM62N02E61ISSUE - JUZXM62N02E6ABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLLIMITUNITDrain-Source VoltageVDSS20VGate Source Voltage VGS 12VContinuous Drain Current (VGS=4.5V; TA=25 C)(b) (VGS=4.5V; TA=70 C)(b)ID3.22.6APulsed Drain Current (c)IDM18AContinuous Source Current (Body Diode) (b)IS2.1APulsed Source Current (Body Diode)ISM18APower Dissipation at TA=25 C (a)L FEATURESLow on-resistanceFast switching speedLow thresholdLow gate driveSOT23-6 packageAPPLICATIONSDC - DC ConvertersPower Management FunctionsDisconnect switchesMotor controlORDERING INFORMATIONDEVICEREEL SIZE (inches)TAPE WIDTH (mm)QUANTITYPER REELZXM62N02E6TA78mm embossed3000 unitsZXM62N02E6TC138mm embossed10000 unitsDEVICE MARKING 2N0220V N-CHANNEL ENHANCEMENT MODE MOSFETSOT23-6ZXM62N02E61ISSUE - JUZXM62N02E6ABSOLUTE MAXIMUM RATINGS.PARAMETERSYMBOLLIMITUNITDrain-Source VoltageVDSS20VGate Source Voltage VGS 12VContinuous Drain Current (VGS=4.5V; TA=25 C)(b) (VGS=4.5V; TA=70 C)(b)ID3.22.6APulsed Drain Current (c)IDM18AContinuous Source Current (Body Diode) (b)IS2.1APulsed Source Current (Body Diode)ISM18APower Dissipation at TA=25 C (a)Linear Derating Factor PD1.18.8WmW/ CPower Dissipation at TA=25 C (b)Linear Derating Factor PD1.713.6WmW/ CTHERMAL RESISTANCEPARAMETERSYMBOLVALUEUNITJunction to Ambient (a)RqJA113 C/WJunction to Ambient (b)RqJA73 C/WNOTES(a) For a device surface mounte specification, design, price or conditions of
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CT25, T150, JUZXM62N02E6PACKAGE, CT150, REELZXM62N02E6TA78mm, JUZXM62N02E6ABSOLUTE, ZXM62N02E6, CHARACTERISTICS6ISSUE, OL9-8NP, DIMENSIONSA12LDATUM, TA70, C150, N-CHANNEL, DC-DC, TA25, 2N0220V, MOSFETSOT23-6ZXM62N02E61ISSUE
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| T150 Product Brief | T150 Lead Time | T150 Technical Specs | T150 Schematische |
| T150 相等于 | T150 Errata | T150 EOL | T150 Ficha técnica de |
| T150 Options | T150 Leadtime | T150 Stock | T150 数据 |
| T150 equivalente | T150 데이터시트 | T150 Features | CT150 Product Brief |
| CT150 相等於 | CT150 δελτίο | CT150 Errata | CT150 Datasheet |
| CT150 Prototype | CT150 MOQ | CT150 Inventory | CT150 Схематический |
| CT150 Prototyping | CT150 示意圖 | CT150 Design Idea | CT150 Features |
| CT150 Application Note | CT150 Ersatz | CHARACTERISTICS Product Brief | CHARACTERISTICS Datenblatt |
| CHARACTERISTICS Errata | CHARACTERISTICS RoHS | CHARACTERISTICS Catalog | CHARACTERISTICS Distribution |
| CHARACTERISTICS 數據 | CHARACTERISTICS 회로도 | CHARACTERISTICS Design | CHARACTERISTICS Equivalent |
| CHARACTERISTICS equivalente | CHARACTERISTICS Design Idea | CHARACTERISTICS Application Note | CHARACTERISTICS Archive |
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| N-CHANNEL Distributor | N-CHANNEL Mechanical Outline | N-CHANNEL Feature | N-CHANNEL MOQ |
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| N-CHANNEL Example | N-CHANNEL Application Note | N-CHANNEL équivalent | JUZXM62N02E6PAC Archive |
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| CT25 Prototyping | CT25 Pin-out | CT25 Fiche technique | CT25 Equivalent |
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| DIMENSIONSA12LD Prototype | DIMENSIONSA12LD Feature | DIMENSIONSA12LD MOQ | DIMENSIONSA12LD Fichetechnique |
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